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Showing content from https://pubmed.ncbi.nlm.nih.gov/28974712 below:

Understanding contact gating in Schottky barrier transistors from 2D channels

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doi: 10.1038/s41598-017-12816-3. Understanding contact gating in Schottky barrier transistors from 2D channels

Affiliations

¹ School of Electrical and Computer Engineering, Purdue University, West Lafayette, 47907, Indiana, USA. prakash1@purdue.edu.
² Birck Nanotechnology Center, Purdue University, West Lafayette, 47907, Indiana, USA. prakash1@purdue.edu.
³ School of Electrical and Computer Engineering, Purdue University, West Lafayette, 47907, Indiana, USA.
⁴ Network for Computational Nanotechnology, 207 S. Martin Jischke Drive, West Lafayette, 47907, Indiana, USA.
⁵ Birck Nanotechnology Center, Purdue University, West Lafayette, 47907, Indiana, USA.

PMID: 28974712
PMCID: PMC5626721
DOI: 10.1038/s41598-017-12816-3

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Understanding contact gating in Schottky barrier transistors from 2D channels

Abhijith Prakash et al. Sci Rep. 2017.

doi: 10.1038/s41598-017-12816-3. Affiliations

¹ School of Electrical and Computer Engineering, Purdue University, West Lafayette, 47907, Indiana, USA. prakash1@purdue.edu.
² Birck Nanotechnology Center, Purdue University, West Lafayette, 47907, Indiana, USA. prakash1@purdue.edu.
³ School of Electrical and Computer Engineering, Purdue University, West Lafayette, 47907, Indiana, USA.
⁴ Network for Computational Nanotechnology, 207 S. Martin Jischke Drive, West Lafayette, 47907, Indiana, USA.
⁵ Birck Nanotechnology Center, Purdue University, West Lafayette, 47907, Indiana, USA.

PMID: 28974712
PMCID: PMC5626721
DOI: 10.1038/s41598-017-12816-3

Item in Clipboard

Abstract

In this article, a novel two-path model is proposed to quantitatively explain sub-threshold characteristics of back-gated Schottky barrier FETs (SB-FETs) from 2D channel materials. The model integrates the "conventional" model for SB-FETs with the phenomenon of contact gating - an effect that significantly affects the carrier injection from the source electrode in back-gated field effect transistors. The two-path model is validated by a careful comparison with experimental characteristics obtained from a large number of back-gated WSe₂ devices with various channel thicknesses. Our findings are believed to be of critical importance for the quantitative analysis of many three-terminal devices with ultrathin body channels.

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Conflict of interest statement

The authors declare that they have no competing interests.

Figures
Figure 1

( a ) Various components…

Figure 1

( a ) Various components of current in the conventional SB-FET model. (…

Figure 1

(a) Various components of current in the conventional SB-FET model. (b) Schematics of a back-gated WSe₂ Schottky barrier FET. (c) Comparison of the experimental device characteristics with simulations based on the conventional SB-FET model. (d) Comparison of SS for the same set of experimental transfer characteristics as in (c).

Figure 2

( a ) Modified device…

Figure 2

( a ) Modified device structure after the fabrication of a top gate…

Figure 2

(a) Modified device structure after the fabrication of a top gate along with the corresponding SEM image. (b) Top-gated transfer characteristics of a representative device for different values of V_BG after compensating for the back gate induced threshold shifts V_BG0.

Figure 3

Illustration of the two-path model…

Figure 3

Illustration of the two-path model for back-gated SB-FETs where ( a ) shows…

Figure 3

Illustration of the two-path model for back-gated SB-FETs where (a) shows the two injection paths, (b) explains diagrammatically the injection via path-2 and (c) presents a pictorial representation of the number of injecting states N_i along the contact length. Shown in (d) is a typical transfer characteristic of a back-gated WSe₂ SB-FET, along with the individual contributions of each of the two paths, calculated as per the new model for a Schottky barrier height of 0.4 eV and a body thickness of 7 nm by assuming a square root scaling length λ_S for path-1. Green circles assume continuous band movement for path-1 even above its threshold (V_TP1) whereas green dashed lines assume slowed down band movement for path-1 above threshold as described in the text.

Figure 4

Comparison between the experimental device…

Figure 4

Comparison between the experimental device characteristics obtained from various back-gated WSe ₂ SB-FETs…

Figure 4

Comparison between the experimental device characteristics obtained from various back-gated WSe₂ SB-FETs and simulations performed based on the new model.

Figure 5

Extracted Schottky barrier heights as…

Figure 5

Extracted Schottky barrier heights as a function of flake thickness for WSe _2…

Figure 5

Extracted Schottky barrier heights as a function of flake thickness for WSe₂ with Ni as the contact metal.